Characterization & Modeling M/F

Job description

General information

Reference

2019-629  

Job level

20 - Professional First Level

Position description

Posting title

Characterization & Modeling M/F

Regular/Temporary

Temporary

Job description

The main objective of this PhD will be to get an atomistic picture of the defects in semiconductors as can be formed under process (implant, oxidation, epitaxy) and to provide a predictive atomic scale understanding linking design and performances. Thanks to the developed reference models, he will actively partake to an innovative multi-scale TCAD (Technology Computer Aided Design) platform.

Thanks to theoretical atomic scale calculations and kinetic Monte Carlo (kMC) simulations the dopant diffusion and the defects introduced in the semiconductor during the process will be studied at the atomic scale.
The student will simulate process and investigate the associated atomic scale mechanisms using the most advanced modeling tools (coupling ab initio calculations, Molecular Dynamics and kinetic Activation Relaxation Technique). All along his PhD, the student will benefit from the experimental resources available at STM in order to match experiment and theory together. This PhD will contribute to make the current TCAD tools more predictive and reliable toward the manufacturing process optimization and the development of new advanced components.

The PhD will be work within a CEA-LAAS collaboration in order to benefit from large computational resources and share the expertise in abinitio simulation.

Profile

 Education Level Required - BAC+5 (INGENIEUR,DESS,DEA...)

Desired Competencies are  - Optronics/Optoelectronics Proc, Physics Of Semiconductors.

Position localisation

Job location

Europe, France, Crolles

Candidate criteria

Education level required

5 - Master degree

Experience level required

Less than 2 years

Requester

Desired start date

01/07/2019